The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2015
Filed:
Nov. 30, 2009
Applicants:
Peter M. Allen, Cambridge, MA (US);
Wenhao Liu, Cambridge, MA (US);
Moungi G. Bawendi, Cambridge, MA (US);
Inventors:
Peter M. Allen, Cambridge, MA (US);
Wenhao Liu, Cambridge, MA (US);
Moungi G. Bawendi, Cambridge, MA (US);
Assignee:
Massachusetts Institute of Technology, Cambridge, MA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
A61K 49/00 (2006.01);
U.S. Cl.
CPC ...
A61K 49/0067 (2013.01); Y10S 977/953 (2013.01); Y10S 977/774 (2013.01);
Abstract
Water soluble InAs(ZnCdS) semiconductor nanocrystals with bright and stable emission in the near infrared (NIR) wavelength range have been prepared. The NIR semiconductor nanocrystals can be functionalized to enable imaging of specific cellular proteins. In addition, the utility of the NIR region for in vivo biological imaging is clearly demonstrated by the superior ability of InAs(ZnCdS) semiconductor nanocrystals to image tumor vasculature.