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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9011702 B1

PDFFull Text
Date of Patent:
Apr. 21, 2015

Filed:

Sep. 23, 2010

Method for manufacturing electrode for power storage device and method for manufacturing power storage device

Applicants:

Shunpei Yamazaki, Tokyo, JP;

Kazutaka Kuriki, Kanagawa, JP;

Junpei Momo, Kanagawa, JP;

Rie Matsubara, Kanagawa, JP;

Inventors:

Shunpei Yamazaki, Tokyo, JP;

Kazutaka Kuriki, Kanagawa, JP;

Junpei Momo, Kanagawa, JP;

Rie Matsubara, Kanagawa, JP;

Assignee:

Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;

Attorney:

Fish & Richardson P.C.

Primary Examiner:

Binh X Tran

Assistant Examiner:

Thomas Pham

Int. Cl.
CPC ...
H01G 4/00 (2006.01); H01G 5/00 (2006.01); H01G 7/00 (2006.01); H01G 9/00 (2006.01); H01G 13/00 (2013.01); H01B 13/00 (2006.01); B31D 3/00 (2006.01); C25F 3/00 (2006.01); H01M 4/13 (2010.01); H01M 4/58 (2010.01); H01G 9/008 (2006.01); H01G 9/055 (2006.01); H01G 9/04 (2006.01); H01G 11/26 (2013.01); H01G 11/28 (2013.01); H01G 11/86 (2013.01); H01M 4/04 (2006.01); H01M 4/139 (2010.01); H01M 4/66 (2006.01); H01G 11/50 (2013.01); H01M 10/0525 (2010.01);
U.S. Cl.
CPC ...
H01G 9/016 (2013.01); H01G 9/055 (2013.01); H01G 9/058 (2013.01); H01G 11/26 (2013.01); H01G 11/28 (2013.01); H01G 11/86 (2013.01); H01M 4/0438 (2013.01); H01M 4/0445 (2013.01); H01M 4/13 (2013.01); H01M 4/139 (2013.01); H01M 4/661 (2013.01); H01G 11/50 (2013.01); H01M 10/0525 (2013.01); Y02E 60/122 (2013.01); Y02E 60/13 (2013.01);
Abstract

One of objects is to reduce the effect caused by the volume expansion of an active material. An embodiment is a method for manufacturing an electrode for a power storage device which includes an active material over one of surfaces of a current collector. The active material is formed by forming a conductive body functioning as the current collector; forming a mixed layer including an amorphous region and a microcrystalline region over one of surfaces of the conductive body; and etching the mixed layer selectively, so that a part of or the whole of the amorphous region is removed and the microcrystalline region is exposed. Thus, the effect caused by the volume expansion of the active material is reduced.

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