The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2015
Filed:
Jan. 12, 2013
Scott T. Becker, Scotts Valley, CA (US);
Michael C. Smayling, Fremont, CA (US);
Dhrumil Gandhi, Cupertino, CA (US);
Jim Mali, Morgan Hill, CA (US);
Carole Lambert, Campbell, CA (US);
Jonathan R. Quandt, San Jose, CA (US);
Daryl Fox, Campbell, CA (US);
Scott T. Becker, Scotts Valley, CA (US);
Michael C. Smayling, Fremont, CA (US);
Dhrumil Gandhi, Cupertino, CA (US);
Jim Mali, Morgan Hill, CA (US);
Carole Lambert, Campbell, CA (US);
Jonathan R. Quandt, San Jose, CA (US);
Daryl Fox, Campbell, CA (US);
Tela Innovations, Inc., Los Gatos, CA (US);
Abstract
A first transistor has source and drain regions within a first diffusion fin. The first diffusion fin projects from a surface of a substrate. The first diffusion fin extends lengthwise in a first direction from a first end to a second end of the first diffusion fin. A second transistor has source and drain regions within a second diffusion fin. The second diffusion fin projects from the surface of the substrate. The second diffusion fin extends lengthwise in the first direction from a first end to a second end of the second diffusion fin. The second diffusion fin is positioned next to and spaced apart from the first diffusion fin. Either the first end or the second end of the second diffusion fin is positioned in the first direction between the first end and the second end of the first diffusion fin.