The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 14, 2015

Filed:

Apr. 10, 2013
Applicant:

Forschungsverbund Berlin E.v., Berlin, DE;

Inventors:

Markus Weyers, Wildau, DE;

Götz Erbert, Löbau, DE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 3/093 (2006.01); H01L 33/06 (2010.01); H01S 5/04 (2006.01); H01S 5/028 (2006.01); H01S 5/12 (2006.01); H01S 3/094 (2006.01);
U.S. Cl.
CPC ...
H01L 33/06 (2013.01); H01S 5/0287 (2013.01); H01S 5/041 (2013.01); H01S 5/1203 (2013.01); H01S 3/094092 (2013.01);
Abstract

An edge-emitting semiconductor component, comprising a semiconductor substrate layer and epitaxially on-grown semiconductor layers, is disclosed. According to the invention an active zone of the semiconductor layers is designed to absorb pumped optical radiation of a first wavelength by multi-photon absorption and generate an optical radiation of a second wavelength that is shorter than the first wavelength. A step of multiplying the first wavelength of the pumped optical radiation to a second harmonic using a nonlinear crystal is advantageously made redundant. Furthermore, a system for frequency conversion is disclosed, comprising the semiconductor component, a pump laser diode designed to generate the pumped optical radiation and methods for manufacturing the semiconductor component and operating the system for frequency conversion.


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