The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2015
Filed:
Feb. 12, 2014
Mitsubishi Electric Corporation, Tokyo, JP;
Kimio Shigihara, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A semiconductor laser device includes a first conductivity type semiconductor substrate, a first conductivity type cladding layer, a first light guide layer, an active layer, a second light guide layer, and a second conductivity type cladding layer laminated on the semiconductor substrate in that order. The semiconductor laser device supports at least one of a first-order and higher-order mode of oscillation in the semiconductor laser in crystal growth direction of the active layer. The first light guide layer is thicker than the second light guide layer. A first conductivity type low refractive index layer having a lower refractive index than refractive index of the first conductivity type cladding layer, is disposed between the first conductivity type cladding layer and the first light guide layer. The refractive index of the second light guide layer is higher than the refractive index of the first light guide layer.