The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2015
Filed:
Feb. 04, 2013
Applicant:
Kabushiki Kaisha Toshiba Corporation, Tokyo, JP;
Inventors:
Akio Kaneko, Mie, JP;
Wataru Sakamoto, Mie, JP;
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); G11C 16/16 (2006.01); G11C 16/06 (2006.01); G11C 16/14 (2006.01);
U.S. Cl.
CPC ...
G11C 16/16 (2013.01); G11C 16/06 (2013.01); G11C 16/0483 (2013.01); G11C 16/14 (2013.01);
Abstract
According to one embodiment, there is provided a non-volatile semiconductor storage device including a memory cell and a control unit. The memory cell has a gate electrode including a control gate and a charge storage region on a semiconductor substrate and has a channel region under the gate electrode in the semiconductor substrate. The control unit, during an erase operation where electric charges written in the charge storage region are extracted to the channel region, periodically varies a voltage which is to be applied between the control gate and the channel region.