The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 14, 2015

Filed:

Feb. 26, 2013
Applicant:

Phison Electronics Corp., Miaoli, TW;

Inventors:

Wei Lin, Taipei, TW;

Yu-Cheng Hsu, Yilan County, TW;

Kuo-Yi Cheng, Taipei, TW;

Chun-Yen Chang, Hsinchu County, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 29/04 (2006.01); G11C 29/00 (2006.01); G11C 16/14 (2006.01); G11C 16/34 (2006.01);
U.S. Cl.
CPC ...
G11C 29/82 (2013.01); G11C 16/14 (2013.01); G11C 29/04 (2013.01); G11C 16/349 (2013.01); G11C 2029/0409 (2013.01);
Abstract

A memory repairing method for a rewritable non-volatile memory module and a memory controller and a memory storage apparatus are provided. The method includes monitoring a wear degree of the rewritable non-volatile memory module; determining whether the wear degree of the rewritable non-volatile memory module is larger than a threshold; and heating the rewritable non-volatile memory module such that the temperature of the rewritable non-volatile memory module lies in between 100° C.˜600° C. if the wear degree of the rewritable non-volatile memory module is larger than the threshold. Accordingly, deteriorated memory cells in the rewritable non-volatile memory module can be repaired, thereby preventing data loss.


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