The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 14, 2015

Filed:

Oct. 31, 2012
Applicants:

Sumitomo Electric Industries, Ltd., Osaka-shi, JP;

National University Corporation Toyohashi University of Technology, Toyohashi-shi, JP;

Inventors:

Kazuhiro Fujikawa, Osaka, JP;

Nobuo Shiga, Osaka, JP;

Takashi Ohira, Toyohashi, JP;

Kazuyuki Wada, Toyohashi, JP;

Tuya Wuren, Toyohashi, JP;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H02H 9/04 (2006.01); H02M 1/08 (2006.01); H02M 1/32 (2007.01); H03K 17/082 (2006.01); H03K 17/16 (2006.01);
U.S. Cl.
CPC ...
H02M 1/08 (2013.01); H02M 1/32 (2013.01); H03K 17/0822 (2013.01); H03K 17/163 (2013.01);
Abstract

Provided is a transistor protection circuit capable of appropriately protecting a transistor even when a switching frequency is high. A transistor protection circuit according to an embodiment of the present invention is a transistor protection circuit for protecting a voltage-driven transistor that is switch-controlled by the application of a high-potential-side voltage or low-potential-side voltage of a power supply to a gate terminal of the transistor by a drive circuit. The transistor protection circuit has a power supply controller that gradually lowers the high-potential-side voltage of the power supply upon receiving a protection command for executing protection of the transistor.


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