The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 14, 2015

Filed:

Jun. 26, 2012
Applicants:

Feng Liu, San Ramon, CA (US);

Prakash Mani, Fremont, CA (US);

Christian Kaiser, San Jose, CA (US);

Laurence L. Chen, Hayward, CA (US);

Inventors:

Feng Liu, San Ramon, CA (US);

Prakash Mani, Fremont, CA (US);

Christian Kaiser, San Jose, CA (US);

Laurence L. Chen, Hayward, CA (US);

Assignee:

Western Digital (Fremont), LLC, Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11B 5/39 (2006.01); G11B 5/60 (2006.01);
U.S. Cl.
CPC ...
G11B 5/60 (2013.01);
Abstract

A method comprises providing a magnetic element including a free layer, a pinned layer, a nonmagnetic spacer layer between the free and pinned layers, and a pinning layer adjacent the pinned layer. The free layer is biased in a first direction. The pinned layer has a first layer having a first magnetization, a second layer having a second magnetization, and a nonmagnetic layer between the first and second layer. The first magnetization is pinned parallel to a second direction substantially perpendicular to the first direction and substantially perpendicular to the ABS. The second magnetization is antiparallel to the second direction. The pinning layer is oriented along the second direction. The method further comprises providing a hard bias structure having a hard bias magnetization, initializing the hard bias magnetization along the second direction, performing at least one thermal treatment, and resetting the hard bias magnetization substantially along the first direction.


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