The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 14, 2015

Filed:

Dec. 19, 2013
Applicant:

Mediatek Inc., Hsin-Chu, TW;

Inventors:

Chen-Yen Ho, New Taipei, TW;

Chi-Lun Lo, Yangmei Township, Taoyuan County, TW;

Hung-Chieh Tsai, Tainan, TW;

Yu-Hsin Lin, Taipei, TW;

Assignee:

MediaTek Inc., Hsin-Chu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03M 3/00 (2006.01); H03F 3/45 (2006.01); H03F 3/26 (2006.01); H03F 3/30 (2006.01);
U.S. Cl.
CPC ...
H03F 3/45071 (2013.01); H03F 3/265 (2013.01); H03F 3/45179 (2013.01); H03M 3/39 (2013.01); H03F 3/3023 (2013.01); H03F 3/45183 (2013.01); H03F 3/45475 (2013.01); H03F 2203/30021 (2013.01); H03F 2203/30033 (2013.01); H03F 2203/45134 (2013.01); H03F 2203/45138 (2013.01); H03F 3/30 (2013.01);
Abstract

An amplifier includes a front-end gain stage and an AC-coupled push-pull output stage. The AC-coupled push-pull output stage includes a first transistor, having a source, a drain and a gate, wherein the source of the first transistor is coupled to a first voltage level; a second transistor, having a source, a drain and a gate, wherein the source of the second transistor is coupled to a second voltage level, the gate of the second transistor is coupled to the front-end gain stage, and the drain of the second transistor is coupled to the drain of the first transistor to form an output terminal of the amplifier; an AC-coupled capacitor, which is a passive two terminal electrical component coupled between the front-end gain stage and the gate of the first transistor; and a resistance component, coupling the gate of the first transistor to a bias voltage level.


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