The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2015
Filed:
Nov. 02, 2012
Nvidia Corporation, Santa Clara, CA (US);
Dushyant Narayen, Santa Clara, CA (US);
Nerinder Singh, San Jose, CA (US);
Gunaseelan Ponnuvel, Santa Clara, CA (US);
Hemant Kumar, Santa Clara, CA (US);
Luai Nasser, Santa Clara, CA (US);
Craig Nishizaki, Santa Clara, CA (US);
Nvidia Corporation, Santa Clara, CA (US);
Abstract
An IDDQ test system and method that, in one embodiment, includes 1) an empirical extraction subsystem operable to generate an IDDQ versus temperature model for a given semiconductor device design, 2) an automatic test equipment (ATE) test subsystem operable to obtain a measured IDDQ value (IDDQ) at a measured temperature (T) for a specific semiconductor device embodying the given semiconductor device design, the measured temperature (T) obtained within 5 seconds of obtaining the measured IDDQ value (IDDQ), and 3) a scaling subsystem operable to scale the measured IDDQ value (IDDQ) at the measured temperature (T) to a compensated IDDQ value (IDDQ) at a desired temperature (T) using the IDDQ versus temperature model.