The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 14, 2015

Filed:

Aug. 10, 2009
Applicants:

Tomoki Ono, Tottori, JP;

Yasunori Abe, Nagaokakyo, JP;

Fumio Shirasaki, Tottori, JP;

Inventors:

Tomoki Ono, Tottori, JP;

Yasunori Abe, Nagaokakyo, JP;

Fumio Shirasaki, Tottori, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01B 7/30 (2006.01); G01R 33/09 (2006.01); B82Y 25/00 (2011.01); H01F 10/32 (2006.01); H01L 43/08 (2006.01);
U.S. Cl.
CPC ...
G01R 33/093 (2013.01); B82Y 25/00 (2013.01); H01F 10/325 (2013.01); H01F 10/3254 (2013.01); H01L 43/08 (2013.01);
Abstract

Provided are a self-pinned spin valve magnetoresistance effect film, a magnetic sensor using the same, and a rotation angle detection device. The self-pinned spin valve magnetoresistance effect film has a strong coupling magnetic field in a pinned layer, a small reduction in the change in resistance, and superior resistance to magnetic fields without reducing the coercive force in a first ferromagnetic layer, which is a pinned layer in the film, even when exposed to a strong external magnetic field. By inserting a non-magnetic layer between a ground layer and a pinned layer to form the spin valve magnetoresistance effect film, the self-pinned spin valve magnetoresistance effect film having superior resistance to magnetic fields, a magnetic sensor using the same, and a rotation angle detection device are obtained.


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