The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 14, 2015

Filed:

Nov. 01, 2011
Applicant:

Geoffrey D. Batchelder, Chandler, AZ (US);

Inventor:

Geoffrey D. Batchelder, Chandler, AZ (US);

Assignee:

Medtronic, Inc., Minneapolis, MN (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/18 (2006.01); H01L 31/115 (2006.01); H01L 31/068 (2012.01); H01L 31/043 (2014.01); G21H 1/06 (2006.01); H01M 4/02 (2006.01);
U.S. Cl.
CPC ...
H01L 31/068 (2013.01); G21H 1/06 (2013.01); H01M 4/02 (2013.01); Y02E 10/547 (2013.01); H01L 2924/0002 (2013.01); H01L 31/043 (2013.01);
Abstract

A power converter comprises a nuclear radiation emitter having a first side and a second side, wherein the nuclear radiation emitter comprises a radiation-emitting radioisotope, a plurality of semiconductor substrates disposed over the first side of the nuclear radiation emitter, wherein each of the plurality of semiconductor substrates comprises a junction for converting nuclear radiation particles to electrical energy, and at least one high-density layer, wherein the high density layer has a density that is higher than a density of the semiconductor substrates, and wherein the high-density layer is disposed between two of the plurality of semiconductor substrates.


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