The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2015
Filed:
Aug. 30, 2012
Applicant:
Jae Jung Lee, Seoul, KR;
Inventor:
Jae Jung Lee, Seoul, KR;
Assignee:
SK Hynix Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/72 (2006.01); H01L 27/115 (2006.01); H01L 23/522 (2006.01); H01L 29/792 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 23/5226 (2013.01); H01L 27/11524 (2013.01); H01L 27/11529 (2013.01); H01L 29/7926 (2013.01);
Abstract
A semiconductor memory device of the present invention includes a first dielectric layer located on an upper surface of a semiconductor substrate including contact area and a non-contact area, an etching stop layer pattern formed to expose the first dielectric layer in the non-contact area and cover the first dielectric layer in the contact area, a contact hole extended to the semiconductor substrate of the contact area through the etching stop layer pattern and the first dielectric layer, a contact plug located in the contact hole, and a conductive line connected to the contact plug.