The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2015
Filed:
Oct. 23, 2013
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 23/498 (2006.01); H01L 23/00 (2006.01); H01L 21/768 (2006.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
H01L 23/498 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/06 (2013.01); H01L 21/76838 (2013.01); H01L 22/32 (2013.01); H01L 2224/03462 (2013.01); H01L 2224/03464 (2013.01); H01L 2224/0347 (2013.01); H01L 2224/03903 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/05073 (2013.01); H01L 2224/05082 (2013.01); H01L 2224/051 (2013.01); H01L 2224/05155 (2013.01); H01L 2224/05157 (2013.01); H01L 2224/05164 (2013.01); H01L 2224/05187 (2013.01); H01L 2224/05562 (2013.01); H01L 2224/05568 (2013.01); H01L 2224/05572 (2013.01); H01L 2224/05582 (2013.01); H01L 2224/05583 (2013.01); H01L 2224/056 (2013.01); H01L 2224/05644 (2013.01); H01L 2224/05655 (2013.01); H01L 2224/05657 (2013.01); H01L 2224/05664 (2013.01); H01L 2224/06051 (2013.01); H01L 2224/06102 (2013.01); H01L 2224/06505 (2013.01); H01L 2224/06515 (2013.01); H01L 2924/01013 (2013.01); H01L 2924/01025 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/0103 (2013.01); H01L 2924/01032 (2013.01); H01L 2924/01047 (2013.01); H01L 2924/01049 (2013.01); H01L 2924/01073 (2013.01); H01L 2924/01079 (2013.01); H01L 2924/01082 (2013.01); H01L 2924/01005 (2013.01); H01L 2924/01006 (2013.01); H01L 2924/01019 (2013.01); H01L 2924/01024 (2013.01); H01L 2924/01033 (2013.01); H01L 2924/0104 (2013.01); H01L 2924/01042 (2013.01); H01L 2924/01045 (2013.01); H01L 2924/0105 (2013.01); H01L 2924/01072 (2013.01); H01L 2924/01074 (2013.01); H01L 2924/01075 (2013.01); H01L 2924/01078 (2013.01);
Abstract
A semiconductor device and method are disclosed. The semiconductor device includes a substrate having a first region and a second region and an insulating layer arranged on the substrate. A first conductive layer is arranged in or on insulating layer in the first region and a second conductive layer is arranged in or on the insulating layer in the second region. The first conductive layer comprises a first conductive material and the second conductive layer comprises a second conductive material wherein the first conductive material is different than the second conductive material. A metal layer is arranged on the first conductive layer.