The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2015
Filed:
Nov. 12, 2012
Applicants:
Ning Qu, Reutlingen, DE;
Alfred Goerlach, Kusterdingen, DE;
Inventors:
Ning Qu, Reutlingen, DE;
Alfred Goerlach, Kusterdingen, DE;
Assignee:
Robert Bosch GmbH, Stuttgart, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/47 (2006.01); H01L 29/40 (2006.01); H01L 29/872 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/8725 (2013.01); H01L 29/0634 (2013.01); H01L 29/47 (2013.01); H01L 29/872 (2013.01);
Abstract
In a Schottky diode having an n-type substrate, an n-type epitaxial layer, at least two p-doped trenches introduced into the n-type epitaxial layer, mesa regions between adjacent trenches, a metal layer functioning as a cathode electrode, and another metal layer functioning as an anode electrode, the thickness of the epitaxial layer is more than four times the depth of the trenches.