The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2015
Filed:
Sep. 01, 2011
Tadao Ishibashi, Yokohama, JP;
Seigo Ando, Yokohama, JP;
Masahiro Nada, Atsugi, JP;
Yoshifumi Muramoto, Atsugi, JP;
Haruki Yokoyama, Atsugi, JP;
Tadao Ishibashi, Yokohama, JP;
Seigo Ando, Yokohama, JP;
Masahiro Nada, Atsugi, JP;
Yoshifumi Muramoto, Atsugi, JP;
Haruki Yokoyama, Atsugi, JP;
NTT Electronics Corporation, Kanagawa, JP;
Nippon Telegraph and Telephone Corporation, Tokyo, JP;
Abstract
An APD is provided with the semi-insulating substrate, a first mesa having a first laminate constitution in which a p-type electrode layer, a p-type light absorbing layer, a light absorbing layer with a low impurity concentration, a band gap inclined layer, a p-type electric field control layer, an avalanche multiplier layer, an n-type electric field control layer, and an electron transit layer with a low impurity concentration are stacked in this order on a surface of the semi-insulating substrate, a second mesa having an outer circumference provided inside an outer circumference of the first mesa as viewed from the laminating direction and having a second laminate constitution in which an n-type electrode buffer layer and an n-type electrode layer are stacked in this order on a surface on the electron transit layer side, and a depletion control region that is provided in layers on the second mesa side relative to the p-type electric field control layer, formed in an encircling portion provided inside an outer circumference of the first mesa and encircling an outer circumference of the second mesa, and prevents the encircling portion of the p-type electric field control layer from being depleted when bias is applied.