The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2015
Filed:
Mar. 22, 2011
Kota Ito, Nisshin, JP;
Mineki Soga, Nisshin, JP;
Cristiano Niclass, Nisshin, JP;
Radivoje S. Popovic, Zug, CH;
Marc Lany, Lausanne, CH;
Toshiki Kindo, Yokohama, JP;
Kota Ito, Nisshin, JP;
Mineki Soga, Nisshin, JP;
Cristiano Niclass, Nisshin, JP;
Radivoje S. Popovic, Zug, CH;
Marc Lany, Lausanne, CH;
Toshiki Kindo, Yokohama, JP;
Toyota Jidosha Kabushiki Kaisha, Aichi-ken, JP;
Abstract
A photodetector disclosed herein comprises an avalanche transistor having a reference junction structure in which temperature characteristics of a current amplification factor are about the same as those of an avalanche photodiode and which is reverse-biased, and a current injection junction structure which injects a reference current to the reference junction structure and which is forward-biased. Voltages to be applied to the avalanche photodiode and the reference junction structure are controlled so that the amplification factor of the reference current amplified in the reference junction structure is retained at a predetermined value, whereby the temperature characteristics of the photodetector utilizing an avalanche effect can be stabilized.