The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 14, 2015

Filed:

Sep. 20, 2011
Applicants:

Janusz Bryzek, Oakland, CA (US);

John Gardner Bloomsburgh, Oakland, CA (US);

Cenk Acar, Newport Coast, CA (US);

Inventors:

Janusz Bryzek, Oakland, CA (US);

John Gardner Bloomsburgh, Oakland, CA (US);

Cenk Acar, Newport Coast, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/84 (2006.01); B81B 3/00 (2006.01); B81B 7/00 (2006.01); H01G 7/06 (2006.01);
U.S. Cl.
CPC ...
B81B 3/0086 (2013.01); B81B 7/007 (2013.01); B81B 2201/0235 (2013.01); B81B 2207/096 (2013.01); H01G 7/06 (2013.01);
Abstract

This document refers to apparatus and methods for a device layer of a microelectromechanical system (MEMS) sensor having vias with reduced shunt capacitance. In an example, a device layer can include a substrate having a pair of trenches separated in a horizontal direction by a portion of the substrate, wherein each trench of the pair of trenches includes first and second vertical layers including dielectric, the first and second vertical layers separated by a third vertical layer including polysilicon.


Find Patent Forward Citations

Bryzek, Janusz. (2015). Through silicon via with reduced shunt capacitance (U.S. Patent No. 9006846). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9006846

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…