The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2015
Filed:
Jan. 17, 2012
Applicant:
Tatsuhiro Oda, Kanagawa-ken, JP;
Inventor:
Tatsuhiro Oda, Kanagawa-ken, JP;
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/788 (2006.01); H01L 21/3205 (2006.01); H01L 21/4763 (2006.01); H01L 21/28 (2006.01); H01L 21/764 (2006.01); H01L 27/115 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7881 (2013.01); H01L 21/28273 (2013.01); H01L 21/764 (2013.01); H01L 27/11521 (2013.01); H01L 29/42324 (2013.01);
Abstract
According to one embodiment, a nonvolatile semiconductor memory device includes a silicon-containing substrate, a plurality of memory cells, and an insulating film. The substrate includes silicon. The plurality of memory cells is provided on the substrate with a spacing therebetween. The insulating film is provided on a sidewall of the memory cell. The insulating film includes a protrusion protruding toward an adjacent one of the memory cells above a void portion is provided between the memory cells.