The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2015
Filed:
Aug. 30, 2013
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Abstract
In general, according to one embodiment, a nonvolatile semiconductor memory device includes a memory cell region and a peripheral region. The memory cell region includes first element isolation regions, first semiconductor regions, a first gate insulating film, a charge storage layer, a second gate insulating film, and a control gate electrode. The first element isolation regions separate a semiconductor layer and include a first insulating film. The first semiconductor regions are separated by the first element isolation regions. The peripheral region includes a second element isolation region a second insulating film. Each of the first element isolation regions includes a first and a second portion. A step is present between the first and the second portion. At least part of a side surface and a lower end of the second element isolation region are surrounded by the semiconductor layer.