The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9006811 B1

PDF
Full Text
Expired
Date of Patent:
Apr. 14, 2015

Filed:

Dec. 03, 2012
Applicant:

Infineon Technologies Austria Ag, Villach, AT;

Inventors:

Andreas Meiser, Sauerlach, DE;

Christian Kampen, Munich, DE;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/788 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/785 (2013.01); H01L 29/66795 (2013.01);
Abstract

One embodiment of a semiconductor device includes a fin on a first side of a semiconductor body. The semiconductor device further includes a body region of a second conductivity type in at least a part of the fin. The semiconductor device further includes a drain extension region of a first conductivity type, a source and a drain region of the first conductivity type, and a gate structure adjoining opposing walls of the fin. The body region and the drain extension region are arranged one after another between the source region and the drain region.


Find Patent Forward Citations

Meiser, Andreas. (2015). Semiconductor device including a fin and a drain extension region and manufacturing method (U.S. Patent No. 9006811). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9006811

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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