The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2015
Filed:
Mar. 15, 2013
Applicant:
Mitsubishi Chemical Corporation, Chiyoda-ku, JP;
Inventor:
Yuki Haruta, Yokkaichi, JP;
Assignee:
Mitsubishi Chemical Corporation, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 33/36 (2010.01); H01L 33/32 (2010.01); H01L 33/16 (2010.01); H01L 33/22 (2010.01); H01L 33/38 (2010.01);
U.S. Cl.
CPC ...
H01L 33/36 (2013.01); H01L 33/32 (2013.01); H01L 33/16 (2013.01); H01L 33/22 (2013.01); H01L 33/38 (2013.01);
Abstract
An object of the present invention is to provide a GaN-based light emitting diode element having a great emission efficiency and suitable for an excitation light source for a white LED. The GaN-based light emitting diode element includes an n-type conductive m-plane GaN substrate, a light emitting diode structure which is formed of a GaN-based semiconductor, on a front face of the m-plane GaN substrate, and an n-side ohmic electrode formed on a rear face of the m-plane GaN substrate, wherein a forward voltage is 4.0 V or less when a forward current applied to the light emitting diode element is 20 mA.