The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2015
Filed:
Nov. 13, 2012
Applicant:
Panasonic Corporation, Osaka, JP;
Inventors:
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/22 (2010.01); H01S 5/32 (2006.01); H01S 5/323 (2006.01); H01S 5/02 (2006.01); H01S 5/40 (2006.01);
U.S. Cl.
CPC ...
H01L 33/22 (2013.01); H01S 5/0207 (2013.01); H01S 5/3203 (2013.01); H01S 5/32341 (2013.01); H01S 2301/173 (2013.01); H01S 5/021 (2013.01); H01S 5/4031 (2013.01);
Abstract
A nitride semiconductor light emitting device includes: an uneven substrate having an uneven structure in which recesses are formed; a first nitride semiconductor layer of a first conductive type formed on the uneven structure; a first light emitting layer formed on the first nitride semiconductor layer; and a second nitride semiconductor layer of a second conductive type formed on the light emitting layer, wherein each protrusion has a bottom made of a material or composition having a thermal expansion coefficient larger than the thermal expansion coefficient of the material or composition of the first nitride semiconductor layer.