The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 14, 2015

Filed:

Feb. 10, 2014
Applicant:

University of Florida Research Foundation, Inc., Gainesville, FL (US);

Inventors:

Franky So, Gainesville, FL (US);

Do Young Kim, Gainesville, FL (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/15 (2006.01); H01L 31/12 (2006.01); H01L 33/00 (2010.01); G01J 5/20 (2006.01); H01L 27/28 (2006.01);
U.S. Cl.
CPC ...
G01J 5/20 (2013.01); H01L 27/288 (2013.01); H01L 33/0045 (2013.01);
Abstract

Embodiments of the invention pertain to a method and apparatus for sensing infrared (IR) radiation. In a specific embodiment, a night vision device can be fabricated by depositing a few layers of organic thin films. Embodiments of the subject device can operate at voltages in the range of 10-15 Volts and have lower manufacturing costs compared to conventional night vision devices. Embodiments of the device can incorporate an organic phototransistor in series with an organic light emitting device. In a specific embodiment, all electrodes are transparent to infrared light. An IR sensing layer can be incorporated with an OLED to provide IR-to-visible color up-conversion. Improved dark current characteristics can be achieved by incorporating a poor hole transport layer material as part of the IR sensing layer.


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