The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2015
Filed:
Jul. 09, 2009
Jin Soo Kim, Daejeon, KR;
Jin Hong Lee, Daejeon, KR;
Sung Ui Hong, Daejeon, KR;
Ho Sang Kwack, Chungcheongnam-do, KR;
Byung Seok Choi, Daejeon, KR;
Dae Kon OH, Daejeon, KR;
Jin Soo Kim, Daejeon, KR;
Jin Hong Lee, Daejeon, KR;
Sung Ui Hong, Daejeon, KR;
Ho Sang Kwack, Chungcheongnam-do, KR;
Byung Seok Choi, Daejeon, KR;
Dae Kon Oh, Daejeon, KR;
Electronics and Telecommunications Research Institute, Daejeon, KR;
Abstract
Provided are a quantum dot laser diode and a method of manufacturing the same. The method of manufacturing a quantum dot laser diode includes the steps of: forming a grating structure layer including a plurality of gratings on a substrate; forming a first lattice-matched layer on the grating structure layer; forming at least one quantum dot layer having at least one quantum dot on the first lattice-matched layer; forming a second lattice-matched layer on the quantum dot layer; forming a cladding layer on the second lattice-matched layer; and forming an ohmic contact layer on the cladding layer. Consequently, it is possible to obtain high gain at a desired wavelength without affecting the uniformity of quantum dots, so that the characteristics of a laser diode can be improved.