The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 14, 2015

Filed:

Jun. 26, 2013
Applicant:

Lg Display Co., Ltd., Seoul, KR;

Inventors:

Jae Seok Lee, Gumi-si, KR;

Jae Chang Kwon, Gumi-si, KR;

Yu Ri Shim, Gumi-si, KR;

Min Bo Kim, Gyeongsan-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/04 (2006.01); H01L 31/036 (2006.01); H01L 29/76 (2006.01); G02F 1/136 (2006.01); H01L 29/786 (2006.01); H01L 29/66 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78669 (2013.01); H01L 29/66765 (2013.01); H01L 27/1214 (2013.01); H01L 29/78633 (2013.01);
Abstract

An array substrate of a liquid crystal display device and a method of fabricating the array substrate. A gate electrode of a thin film transistor of the array substrate is formed. The gate electrode has an edge region surrounding an interior region of the gate electrode and the edge region of the gate electrode is thicker than the interior region of the gate electrode. A semiconductor layer is formed over the gate electrode. A source electrode and a drain electrode of the thin film transistor are formed that define a channel region in the semiconductor layer. The channel region is located over the interior region of the gate electrode. Additionally, the gate electrode may be formed with a half-tone mask that results in the edge region of the gate electrode being thicker than the interior region of the gate electrode.


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