Organic light emitting ambipolar field effect transistor with distributed light emission

Abstract

An organic ambipolar light emitting field effect transistor having an architecture with layers stacked one over the other, adapted to generate a diffused illumination is described. The transistor has a gate electrode, a dielectric layer superposed to the gate electrode, an ambipolar channel superposed to the dielectric layer having a P-type semiconductor layer whose energy band is determined by its highest occupied molecular orbital HOMO-SCand lowest unoccupied molecular orbital LUMO-SC, a N-type semiconductor layer whose energy band is determined by its highest occupied molecular orbital HOMO-SCand lowest unoccupied molecular orbital LUMO-SCand a light emitting layer adapted to allow recombination of charge carriers of opposite sign, interposed between the P-type semiconductor layer and the N-type semiconductor layer, whose energy band is determined by its highest occupied molecular orbital HOMO-R and lowest unoccupied molecular orbital LUMO-R, respectively; a source electrode adapted to inject charges of a first type and a drain electrode adapted to inject charges of a second type, said source electrode and drain electrode being in contract with a same layer of said P-type or N-type semiconductor layers, the other of said semiconductor layers being in contact with the dielectric layer.