The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2015
Filed:
Apr. 18, 2012
Applicant:
Eun-hong Lee, Anyang-si, KR;
Inventor:
Eun-hong Lee, Anyang-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 51/05 (2006.01); H01L 29/16 (2006.01); H01L 29/786 (2006.01); B82Y 10/00 (2011.01); H01L 51/00 (2006.01); H01L 27/06 (2006.01);
U.S. Cl.
CPC ...
H01L 51/0554 (2013.01); H01L 29/0673 (2013.01); H01L 29/1606 (2013.01); H01L 29/78645 (2013.01); H01L 29/78684 (2013.01); B82Y 10/00 (2013.01); H01L 51/0048 (2013.01); H01L 51/0558 (2013.01); H01L 27/0629 (2013.01);
Abstract
Type-switching transistors, electronic devices including the same, and methods of operating thereof are provided. A type-switching transistor may include a plurality of gates corresponding to a channel layer. The plurality of gates may include a first gate for switching a type of the transistor and a second gate for controlling ON/OFF characteristics of the channel layer. The first and second gates may be disposed on one side of the channel layer so that the channel layer is not disposed between the first and second gates.