The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2015
Filed:
May. 08, 2013
Chia-ling Kao, San Jose, CA (US);
Kwang-soo Kim, San Jose, CA (US);
Sean S. Kang, San Ramon, CA (US);
Srinivas D. Nemani, Sunnyvale, CA (US);
Chia-Ling Kao, San Jose, CA (US);
Kwang-soo Kim, San Jose, CA (US);
Sean S. Kang, San Ramon, CA (US);
Srinivas D. Nemani, Sunnyvale, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Methods of removing metal hardmasks in the presence of ultra low-k dielectric films are described. In an example, a method of patterning a low-k dielectric film includes forming a pattern in a metal nitride hardmask layer formed above a low-k dielectric film formed above a substrate. The method also includes etching, using the metal nitride hardmask layer as a mask, the pattern at least partially into the low-k dielectric film, the etching involving using a plasma etch based on SiF. The etching also involves forming an SiOpassivation layer at least on sidewalls of the low-k dielectric film formed during the etching. The method also includes removing the metal nitride hardmask layer by a dry etch process, where the SiOpassivation layer protects the low-k dielectric film during the removing.