The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2015
Filed:
Jun. 05, 2013
Applicant:
Globalfoundries Inc., Grand Cayman, KY (US);
Inventor:
Vidmantas Sargunas, Clifton Park, NY (US);
Assignee:
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 21/285 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28518 (2013.01);
Abstract
In one example, the method includes forming a metal layer on a silicon-containing structure, after forming the metal layer, performing an ion implantation process to implant silicon atoms into at least one of the metal layer and the silicon-containing structure and performing a first millisecond anneal process so as to form a first metal silicide region in the silicon-containing structure.
Sargunas, Vidmantas. (2015). Methods of forming metal silicide regions on semiconductor devices using millisecond annealing techniques (U.S. Patent No. 9006104). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9006104
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile