The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2015
Filed:
Oct. 27, 2014
SK Hynix Inc., Gyeonggi-do, KR;
Sung-Wook Jung, Gyeonggi-do, KR;
SK Hynix Inc., Gyeonggi-do, KR;
Abstract
The technology of the present invention relates to a non-volatile memory device and a fabrication method thereof. The non-volatile memory device includes channel layers protruding vertically from a substrate, a plurality of hole-supply layers and a plurality of gate electrodes, which are alternately stacked along the channel layers, and a memory film interposed between the channel layers and the gate electrodes and between the hole-supply layers and the gate electrodes. According to this technology, the hole-supply layers are formed between the memory cells such that sufficient holes are supplied to the memory cells during the erase operation of the memory cells, whereby the erase operation of the memory cells is smoothly performed without using the GIDL current, and the properties of the device are protected from being deteriorated due to program/erase cycling.