The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2015
Filed:
Dec. 24, 2014
Mediatek Inc, Hsin-Chu, TW;
Puo-Yu Chiang, Su'ao Township, Yilan County, TW;
Yan-Liang Ji, Hualien, TW;
MediaTek Inc, Hsin-Chu, TW;
Abstract
A method for fabricating a metal-oxide-semiconductor (MOS) device, performing operations of: forming a first well region embedded in a portion of a semiconductor substrate; forming a first patterned mask layer over the semiconductor substrate; performing a first ion implant process on two portions of the semiconductor substrate exposed by the first patterned mask layer; removing the first patterned mask layer and forming a second patterned mask layer over the semiconductor substrate, exposing a portion of the third well region; performing a second ion implant process to the portion of the third well region exposed by the second patterned mask layer; performing a third implant process to the portion of the third well region exposed by the second patterned mask layer; forming a source region in a portion of the third well region; and forming a drain region in a portion of the fifth well region.