The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2015
Filed:
Jan. 02, 2014
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Bo Kyeong Kang, Seoul, KR;
Jaeseok Kim, Seoul, KR;
Boun Yoon, Seoul, KR;
Hoyoung Kim, Seongnam-si, KR;
Ilyoung Yoon, Hwaseong-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A method of fabricating a semiconductor device includes forming first gate patterns on a semiconductor substrate using an etch mask pattern, forming a trench in the semiconductor substrate between the first gate patterns, forming an insulating layer in the trench, such that the insulating layer fills the trench and is disposed on the etch mask pattern, planarizing the insulating layer until a top surface of the etch mask pattern is exposed, etching a portion of the planarized insulating layer to form a device isolation layer in the trench, forming a second gate layer covering the etch mask pattern and disposed on the device isolation pattern, and planarizing the second gate layer until the top surface of the etch mask pattern is exposed, such that a second gate pattern is formed.