The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2015
Filed:
Jun. 28, 2013
Applicants:
Stmicroelectronics S.r.l., Agrate Brianza, IT;
Stmicroelectronics Asia Pacific Pte, Ltd., Singapore, SG;
Inventors:
Yean Ching Yong, Singapore, SG;
Stefania Fortuna, AciBonaccorsi, IT;
Assignees:
STMicroelectronics S.r.l., Agrate Brianza, IT;
STMicroelectronics Asia Pacific Pte Ltd, Singapore, SG;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/8242 (2006.01); H01L 21/336 (2006.01); H01L 21/265 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 21/265 (2013.01); H01L 29/4232 (2013.01); H01L 29/66666 (2013.01); H01L 29/7827 (2013.01);
Abstract
A method for forming a trench MOSFET includes doping a body region of the trench MOSFET in multiple ion implantation steps each having different ion implantation energy. The method further comprises etching the trench to a depth of about 1.7 μm.