The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 14, 2015

Filed:

Nov. 22, 2011
Applicants:

Arie Shahar, Moshav Magshimim, IL;

Eliezer Traub, Ramat-Gan, IL;

Diego Sclar, Ashdod, IL;

Peter Rusian, Ashdod, IL;

Inventors:

Arie Shahar, Moshav Magshimim, IL;

Eliezer Traub, Ramat-Gan, IL;

Diego Sclar, Ashdod, IL;

Peter Rusian, Ashdod, IL;

Assignee:

General Electric Company, Schenectady, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 31/08 (2006.01); H01L 31/115 (2006.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 31/085 (2013.01); H01L 31/115 (2013.01); H01L 31/18 (2013.01); Y10S 438/959 (2013.01);
Abstract

Radiation detectors and methods of fabricating radiation detectors are provided. One method includes mechanically polishing at least a first surface of a semiconductor wafer using a polishing sequence including a plurality of polishing steps, wherein a last polishing step of the polishing sequence includes polishing with a slurry having a grain size smaller than about 0.1 μm to create a polished first surface. The method also includes applying (i) an encapsulation layer on a top of the polished first surface to seal the polished first surface and (ii) a photoresist layer on top of the encapsulation layer on the polished first surface. The method further includes creating undercuts of the encapsulation layer under the photoresist layer. The method additionally includes partially etching the polished first surface of the semiconductor via the openings in the photoresist layer and in the encapsulation layer to partially etch the semiconductor creating etched regions.


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