The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 14, 2015

Filed:

Jul. 29, 2010
Applicants:

Tokuyuki Nakayama, Ichikawa, JP;

Yoshiyuki Abe, Ichikawa, JP;

Inventors:

Tokuyuki Nakayama, Ichikawa, JP;

Yoshiyuki Abe, Ichikawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01B 1/08 (2006.01); C23C 14/08 (2006.01); C04B 35/01 (2006.01); C04B 35/645 (2006.01); C23C 14/34 (2006.01);
U.S. Cl.
CPC ...
C04B 35/01 (2013.01); C04B 35/645 (2013.01); C23C 14/08 (2013.01); C23C 14/3414 (2013.01); C04B 2235/3229 (2013.01); C04B 2235/3232 (2013.01); C04B 2235/3244 (2013.01); C04B 2235/3256 (2013.01); C04B 2235/3258 (2013.01); C04B 2235/3284 (2013.01); C04B 2235/3286 (2013.01); C04B 2235/3293 (2013.01); C04B 2235/5436 (2013.01); C04B 2235/5445 (2013.01); C04B 2235/5472 (2013.01); C04B 2235/6562 (2013.01); C04B 2235/6565 (2013.01); C04B 2235/6567 (2013.01); C04B 2235/6581 (2013.01); C04B 2235/6585 (2013.01); C04B 2235/6586 (2013.01); C04B 2235/668 (2013.01); C04B 2235/77 (2013.01); C04B 2235/786 (2013.01); C04B 2235/95 (2013.01); C04B 2235/963 (2013.01);
Abstract

A tablet for ion plating enables to attain high rate film-formation of a transparent conductive film suitable for a blue LED or a solar cell, and a noduleless film-formation not generating splash, an oxide sintered body most suitable for obtaining the same, and a production method thereof. A tablet for ion plating obtained by processing an oxide sintered body includes indium and cerium as oxides, and having a cerium content of 0.3 to 9% by atom, as an atomicity ratio of Ce/(In+Ce). The oxide sintered body has an InOphase of a bixbyite structure as a main crystal phase, has a CeOphase of a fluorite-type structure finely dispersed as crystal grains having an average particle diameter of equal to or smaller than 3 μm, as a second phase. The oxide sintered body is produced by (a) mixing raw material powder consisting of indium oxide powder with an average particle diameter of equal to or smaller than 1.5 μm, then (b) molding the mixed powder, and sintering the molding by a normal pressure sintering method, or (b') molding and sintering the mixed powder by a hot press method.


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