The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2015
Filed:
Jan. 17, 2013
Applicants:
Russell F Jewett, Charlotte, NC (US);
Steven F Pugh, Charlotte, NC (US);
Paul Wickboldt, Walnut Creek, CA (US);
Inventors:
Russell F Jewett, Charlotte, NC (US);
Steven F Pugh, Charlotte, NC (US);
Paul Wickboldt, Walnut Creek, CA (US);
Assignee:
Sencera Energy, Inc., Charlotte, NC (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C30B 23/00 (2006.01); C30B 25/00 (2006.01); C30B 28/12 (2006.01); C30B 28/14 (2006.01); C23C 16/505 (2006.01); C23C 16/507 (2006.01); C30B 25/10 (2006.01); C30B 29/06 (2006.01); H01J 37/32 (2006.01); H01L 21/02 (2006.01); C23C 16/24 (2006.01);
U.S. Cl.
CPC ...
C23C 16/505 (2013.01); C23C 16/507 (2013.01); C30B 25/105 (2013.01); C30B 29/06 (2013.01); H01J 37/321 (2013.01); H01J 37/32174 (2013.01); H01L 21/02422 (2013.01); H01L 21/02532 (2013.01); H01L 21/02554 (2013.01); H01L 21/02595 (2013.01); H01L 21/0262 (2013.01); C23C 16/24 (2013.01);
Abstract
Methods of depositing thin film materials having crystalline content are provided. The methods use plasma enhanced chemical vapor deposition. According to one embodiment of the present invention, microcrystalline silicon films are obtained. According to a second embodiment of the present invention, crystalline films of zinc oxide are obtained. According to a third embodiment of the present invention, crystalline films of iron oxide are obtained.