The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2015
Filed:
Dec. 02, 2011
Tomoyuki Oki, Tokyo, JP;
Hideki Watanabe, Tokyo, JP;
Rintaro Koda, Tokyo, JP;
Masaru Kuramoto, Tokyo, JP;
Hiroyuki Yokoyama, Tokyo, JP;
Tomoyuki Oki, Tokyo, JP;
Hideki Watanabe, Tokyo, JP;
Rintaro Koda, Tokyo, JP;
Masaru Kuramoto, Tokyo, JP;
Hiroyuki Yokoyama, Tokyo, JP;
Sony Corporation, Tokyo, JP;
Tohoku University, Sendai-Shi, JP;
Abstract
A laser diode device includes a laminated structure in which a first compound semiconductor layer, a third compound semiconductor layer that has a light emitting region and a saturable absorption region, and a second compound semiconductor layer are sequentially layered, a second electrode, and a first electrode. The laminated structure has ridge stripe structure. The second electrode is separated into a first section to obtain forward bias state by applying a direct current to the first electrode through the light emitting region and a second section to add electric field to the saturable absorption region by an isolation trench. When minimum width of the ridge stripe structure is W, and width of the ridge stripe structure of the second section of the second electrode in an interface between the second section of the second electrode and the isolation trench is W, 1<W/Wis satisfied.