The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2015
Filed:
Dec. 14, 2012
Applicant:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Inventors:
Assignee:
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonngi-Do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 16/06 (2006.01); G11C 7/00 (2006.01); G11C 7/06 (2006.01); G11C 27/00 (2006.01); G11C 16/28 (2006.01); G11C 11/56 (2006.01);
U.S. Cl.
CPC ...
G11C 16/28 (2013.01); G11C 11/56 (2013.01);
Abstract
A sense amplifier circuit of a nonvolatile semiconductor memory device is provided. The sense amplifier circuit includes a reference voltage generator, a sensing voltage generator and a comparator. The sensing voltage generator outputs a sensing voltage to a sensing node depending on a current flowing through a data line. A load transistor supplying a current to the data line is directly connected to a clamping node. The load transistor is included in a current mirror circuit. In a read operation, a low voltage drive operation is performed and a sensing speed and power consumption are properly controlled.