The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 07, 2015

Filed:

Sep. 14, 2012
Applicants:

Hee-seok Eun, Hwaseong-si, KR;

Sang-hoon Lee, Yongin-si, KR;

Jae-hong Kim, Hwaseong-si, KR;

Sun-mi Yoo, Seoul, KR;

Seok-min Yoon, Suwon-si, KR;

Jong-youl Lee, Seoul, KR;

Inventors:

Hee-seok Eun, Hwaseong-si, KR;

Sang-hoon Lee, Yongin-si, KR;

Jae-hong Kim, Hwaseong-si, KR;

Sun-mi Yoo, Seoul, KR;

Seok-min Yoon, Suwon-si, KR;

Jong-youl Lee, Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/06 (2006.01); G11C 16/26 (2006.01); G11C 11/56 (2006.01); G11C 16/34 (2006.01);
U.S. Cl.
CPC ...
G11C 16/26 (2013.01); G11C 11/5642 (2013.01); G11C 16/3436 (2013.01); G11C 16/349 (2013.01);
Abstract

A reading method of a flash memory, the reading method including: sensing hard data of a first target page by using a first hard read voltage; and generating soft data of the first target page by using at least one pair of, that is, two, first soft read voltages whose voltage levels are different from a voltage level of the first hard read voltage, while the flash memory performs a first operation on the hard data.


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