The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 07, 2015

Filed:

Dec. 09, 2013
Applicants:

Sung-yeon Lee, Seoul, KR;

Yeong-taek Lee, Seoul, KR;

Bo-geun Kim, Suwon-si, KR;

Inventors:

Sung-Yeon Lee, Seoul, KR;

Yeong-Taek Lee, Seoul, KR;

Bo-Geun Kim, Suwon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01); G11C 16/10 (2006.01); G11C 7/00 (2006.01); G11C 11/56 (2006.01); G11C 7/10 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0002 (2013.01); G11C 13/0064 (2013.01); G11C 13/0069 (2013.01); G11C 7/00 (2013.01); G11C 7/1096 (2013.01); G11C 11/56 (2013.01); G11C 11/5678 (2013.01); G11C 13/0004 (2013.01); G11C 2013/0092 (2013.01); G11C 2213/71 (2013.01); G11C 2213/72 (2013.01);
Abstract

Driving methods of a nonvolatile memory device are provided. The driving method includes providing a start pulse adjusted based on a previous write operation to a resistive memory cell to write data, verifying whether the data has accurately been written using the start pulse, and executing a write operation on the resistive memory cell by an incremental one-way write method or a decremental one-way write method according to the verify result. Related nonvolatile memory devices are also provided.


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