The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2015
Filed:
Nov. 07, 2013
Applicant:
Stmicroelectronics R&d (Shanghai) Co. Ltd., Shanghai, CN;
Inventors:
Fei Wang, Shanghai, CN;
KunKun Zheng, Shanghai, CN;
Assignee:
STMicroelectronics R&D (Shanghai) Co. Ltd, Shanghai, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 17/687 (2006.01); H03K 17/10 (2006.01);
U.S. Cl.
CPC ...
H03K 17/102 (2013.01);
Abstract
A pass gate circuit includes a first transistor coupled between an input node (receiving an input signal) and an output node (outputting an output signal). A second transistor is configured to generate a voltage difference in response to a bias current flowing therethrough, wherein that voltage difference is applied between a first gate of the first transistor and the output node. A differential amplifier functions to compare the voltage at the output node to a reference voltage and generate the bias current in response to that comparison.