The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2015
Filed:
Jun. 22, 2012
Applicants:
Pierre Caubet, Le Versoud, FR;
Sylvain Baudot, Grenoble, FR;
Inventors:
Pierre Caubet, Le Versoud, FR;
Sylvain Baudot, Grenoble, FR;
Assignee:
STMicroelectronics (Crolles 2) SAS, Crolles, FR;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/52 (2006.01); H01L 23/532 (2006.01); H01L 21/28 (2006.01); H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28088 (2013.01); H01L 29/4966 (2013.01);
Abstract
A MOS transistor having a gate insulator including a dielectric of high permittivity and a conductive layer including a TiN layer, wherein the nitrogen composition in the TiN layer is sub-stoichiometric in its lower portion and progressively increases to a stoichiometric composition in its upper portion.