The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 07, 2015

Filed:

Oct. 29, 2014
Applicant:

SK Hynix Inc., Icheon-si Gyeonggi-do, KR;

Inventors:

Sun Mi Park, Seoul, KR;

Sang Hyun Oh, Anyang-si, KR;

Sang Bum Lee, Incheon, KR;

Assignee:

SK Hynix Inc., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/40 (2006.01); H01L 21/20 (2006.01); H01L 21/44 (2006.01); H01L 49/02 (2006.01); H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
H01L 28/60 (2013.01); H01L 27/10844 (2013.01);
Abstract

A capacitor of a semiconductor device includes a capacitor structure configured to include electrode layers and dielectric layers alternately stacked, edge regions each stepwise patterned, and a central region disposed between the edge regions, sacrificial layers disposed within the respective electrode layers in the edge regions of the capacitor structure, and support plugs formed in the central region of the capacitor structure and configured to penetrate the electrode layers and the dielectric layers.


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