The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2015
Filed:
Feb. 28, 2014
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventor:
Hong-Jyh Li, Austin, TX (US);
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/94 (2006.01); H01L 31/062 (2012.01); H01L 31/113 (2006.01); H01L 31/119 (2006.01); H01L 27/092 (2006.01); H01L 21/28 (2006.01); H01L 21/8238 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 27/092 (2013.01); H01L 21/28194 (2013.01); H01L 21/823842 (2013.01); H01L 21/823857 (2013.01); H01L 29/517 (2013.01); H01L 29/518 (2013.01);
Abstract
A method of forming transistors and structures thereof. A CMOS device includes high k gate dielectric materials. A PMOS device includes a gate that is implanted with an n type dopant. The NMOS device may be doped with either an n type or a p type dopant. The work function of the CMOS device is set by the material selection of the gate dielectric materials. A polysilicon depletion effect is reduced or avoided.
Li, Hong-Jyh. (2015). Method and manufacture of transistor devices (U.S. Patent No. 9000531). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9000531
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile