The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2015
Filed:
Aug. 26, 2011
Henry L. Edwards, Garland, TX (US);
Tathagata Chatterjee, Allen, TX (US);
Robert C. Bowen, Mt. Laurel, NJ (US);
Henry L. Edwards, Garland, TX (US);
Tathagata Chatterjee, Allen, TX (US);
Robert C. Bowen, Mt. Laurel, NJ (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A CMOS IC containing a quantum well electro-optical device (QWEOD) is disclosed. The QWEOD is formed in an NMOS transistor structure with a p-type drain region. The NLDD region abutting the p-type drain region forms a quantum well. The QWEOD may be fabricated with 65 nm technology node processes to have lateral dimensions less than 15 nm, enabling possible energy level separations above 50 meV. The quantum well electro-optical device may be operated in a negative conductance mode, in a photon emission mode or in a photo detection mode.