The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2015
Filed:
Jul. 19, 2013
Fujitsu Limited, Kawasaki-shi, Kanagawa, JP;
Akira Endoh, Machida, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
A semiconductor device includes: an electron transit layer formed with a semiconductor material, the electron transit layer being formed on a semiconductor substrate; an n-type semiconductor layer formed with a semiconductor material having a wider bandgap than the electron transit layer, the n-type semiconductor layer being formed on the electron transit layer; a δ doping area having an n-type impurity doped in a sheet-shaped region, the δ doping area being formed on the n-type semiconductor layer; and a barrier layer formed with a semiconductor material having a wider bandgap than the electron transit layer, the barrier layer being formed on the δ doping area.