The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2015
Filed:
Jun. 06, 2012
Jeong-yub Lee, Seoul, KR;
Wenxu Xianyu, Gyeonggi-do, KR;
Chang-youl Moon, Gyeonggi-do, KR;
Yong-young Park, Daejeon, KR;
Woo-young Yang, Gyeonggi-do, KR;
In-jun Hwang, Gyeonggi-do, KR;
Jeong-yub Lee, Seoul, KR;
Wenxu Xianyu, Gyeonggi-do, KR;
Chang-youl Moon, Gyeonggi-do, KR;
Yong-young Park, Daejeon, KR;
Woo-young Yang, Gyeonggi-do, KR;
In-jun Hwang, Gyeonggi-do, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
An electrode structure, a GaN-based semiconductor device including the electrode structure, and methods of manufacturing the same, may include a GaN-based semiconductor layer and an electrode structure on the GaN-based semiconductor layer. The electrode structure may include an electrode element including a conductive material and a diffusion layer between the electrode element and the GaN-based semiconductor layer. The diffusion layer may include a material which is an n-type dopant with respect to the GaN-based semiconductor layer, and the diffusion layer may contact the GaN-based semiconductor layer. A region of the GaN-based semiconductor layer contacting the diffusion layer may be doped with the n-type dopant. The material of the diffusion layer may comprise a Group 4 element.