The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2015
Filed:
Oct. 13, 2011
Yasuhiro Miki, Tokushima, JP;
Masahiko Onishi, Anan, JP;
Hirofumi Nishiyama, Tokushima, JP;
Shusaku Bando, Anan, JP;
Yasuhiro Miki, Tokushima, JP;
Masahiko Onishi, Anan, JP;
Hirofumi Nishiyama, Tokushima, JP;
Shusaku Bando, Anan, JP;
Nichia Corporation, Anan-shi, JP;
Abstract
A nitride group semiconductor light emitting device includes a nitride group semiconductor layer, and an electrode structure. The electrode structure is arranged on or above the semiconductor layer, and includes a plurality of deposited metal layers. The plurality of deposited metal layers of the electrode structure includes first and second metal layers. The first metal layer is arranged on the semiconductor layer side. The second metal layer is arranged on or above the first metal layer. The first metal layer contains Cr, and a first metal material. The first metal material has a reflectivity higher than Cr at the light emission peak wavelength of the light emitting device. According to this construction, the first metal layer can have a higher reflectivity as compared with the case where the first metal layer is only formed of Cr, but can keep tight contact with the semiconductor layer.